N-Channel 900 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS
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TK3A90E,S4X

DigiKey Part Number
264-TK3A90ES4X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK3A90E,S4X
Description
PB-F POWER MOSFET TRANSISTOR TO-
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 900 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.6Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
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In-Stock: 70
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
11,73000 €1,73 €
500,83500 €41,75 €
1000,74790 €74,79 €
5000,59488 €297,44 €
1.0000,54568 €545,68 €
2.0000,50431 €1.008,62 €
5.0000,47441 €2.372,05 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1,73000 €
Unit Price with VAT:2,02410 €