IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
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GT30J65MRB,S1E

DigiKey Part Number
264-GT30J65MRBS1E-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
GT30J65MRB,S1E
Description
IGBT 650V 60A TO-3P
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
IGBT 650 V 60 A 200 W Through Hole TO-3P(N)
Datasheet
 Datasheet
EDA/CAD Models
GT30J65MRB,S1E Models
Product Attributes
Type
Description
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Category
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
60 A
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 30A
Power - Max
200 W
Switching Energy
1.4mJ (on), 220µJ (off)
Input Type
Standard
Gate Charge
70 nC
Td (on/off) @ 25°C
75ns/400ns
Test Condition
400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr)
200 ns
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)
Base Product Number
GT30J65
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
13,29000 €3,29 €
251,85880 €46,47 €
1001,51640 €151,64 €
5001,24194 €620,97 €
1.0001,15380 €1.153,80 €
2.0001,14245 €2.284,90 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,29000 €
Unit Price with VAT:3,84930 €