2SC5706-P-E onsemi | Discrete Semiconductor Products

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2SC5706-P-E
DigiKey Part Number	2SC5706-P-E-ND
Manufacturer	onsemi
Manufacturer Product Number	2SC5706-P-E
Description	TRANS NPN 100V 5A TP
Customer Reference
Detailed Description	Bipolar (BJT) Transistor NPN 100 V 5 A 400MHz 800 mW Through Hole TP

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors
Mfr	onsemi
Series	-
Packaging	Bag
Part Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	240mV @ 100mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
Power - Max	800 mW
Frequency - Transition	400MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package	TP
Base Product Number	2SC5706