Name: IRF630NPBF
Brand: Infineon Technologies
SKU: IRF630NPBF-ND
Price: 1.7901 EUR
Availability: InStock

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IRF630NPBF
DigiKey Part Number	IRF630NPBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF630NPBF
Description	MOSFET N-CH 200V 9.3A TO220AB
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRF630NPBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Series HEXFET®	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 25 V
Part Status Active	Power Dissipation (Max) 82W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 200 V	Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IRF630
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V

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