Name: IPW65R040CM8XKSA1
Brand: Infineon Technologies
SKU: 448-IPW65R040CM8XKSA1-ND
Price: 8.5761 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPW65R040CM8XKSA1
DigiKey Part Number	448-IPW65R040CM8XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPW65R040CM8XKSA1
Description	IPW65R040CM8XKSA1
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 62A (Tc) 329W (Tc) Through Hole PG-TO247-3-U06
Datasheet	Datasheet
EDA/CAD Models	IPW65R040CM8XKSA1 cms-models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
cms-packaging	Tube
cms-part-status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.7V @ 680µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3796 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	329W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-U06
Package / Case	TO-247-3