Name: IGT65R140D2ATMA1
Brand: Infineon Technologies
SKU: 448-IGT65R140D2ATMA1TR-ND
Price: 4.1652 EUR
Availability: InStock

Need Help?

Feedback

I agree to receive marketing emails from DigiKey (optional). I understand that I can withdraw consent at any time. Please review our Privacy Notice.

About DigiKey Marketplace Sell on DigiKey.com Fulfilled by DigiKey Careers Site Map Digital Solutions Newsroom

Help and Support Order Status Shipping Rates/Options Returns and Order Issues

Chat (+352) 27 30 28 10 eu.support@digikey.com Co-Browse

IGT65R140D2ATMA1
DigiKey Part Number	448-IGT65R140D2ATMA1TR-ND - Tape & Reel (TR) 448-IGT65R140D2ATMA1CT-ND - Cut Tape (CT) 448-IGT65R140D2ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGT65R140D2ATMA1
Description	GANFET N-CH 650V 13A 8PSFN
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 13A (Tc) 47W (Tc) Surface Mount PG-HSOF-8-3
Datasheet	Datasheet
EDA/CAD Models	IGT65R140D2ATMA1 Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolGaN™ G5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	170mOhm @ 3.1A
Vgs(th) (Max) @ Id	1.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.8 nC @ 3 V
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN

Unit Price without VAT:	3,56000 €
Unit Price with VAT:	4,16520 €

IGT65R140D2ATMA1