GA100JT12-227 Navitas Semiconductor, Inc. | Discrete Semiconductor Products

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GA100JT12-227
DigiKey Part Number	1913-GA100JT12-227-ND
Manufacturer	Navitas Semiconductor, Inc.
Manufacturer Product Number	GA100JT12-227
Description	TRANS SJT 1200V 160A SOT227
Customer Reference
Detailed Description	1200 V 160A (Tc) 535W (Tc) Chassis Mount SOT-227

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Navitas Semiconductor, Inc.
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	10mOhm @ 100A
Vgs(th) (Max) @ Id	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	535W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC