SiC MOSFET - LSIC1MO120E - Littelfuse

Product Highlights > Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

            Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series
                    Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series
    

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 Series Littelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
Ultra-fast switching speeds Lower switching losses High temperature operation		High blocking voltages and low specific on-resistance (SiC material properties)
Applications
Power conversion systems Solar inverters Switch mode power supplies UPS systems		Motor drives High voltage DC/DC converters Battery chargers

Published: 2018-01-05

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