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SI2342DS-T1-GE3 N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23
Price & Procurement
6 623 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,45000 0,45 €
10 0,37900 3,79 €
100 0,28320 28,32 €
500 0,22256 111,28 €
1 000 0,17198 171,98 €

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Alternate Package
  • Tape & Reel (TR)  : SI2342DS-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 6 000 - Immediate
  • Unit Price: 0,15224 €
  • Digi-Reel®  : SI2342DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 6 623 - Immediate
  • Unit Price: Digi-Reel®

SI2342DS-T1-GE3

Datasheet
Digi-Key Part Number SI2342DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2342DS-T1-GE3
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Description MOSFET N-CH 8V 6A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

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Documents & Media
Datasheets SI2342DS-T1-GE3
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15,8nC @ 4,5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2342DS-T1-GE3CT