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SI2307BDS-T1-E3 P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
18 000 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,45000 0,45 €
10 0,37900 3,79 €
100 0,28320 28,32 €
500 0,22256 111,28 €
1 000 0,17198 171,98 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2307BDS-T1-E3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 18 000 - Immediate
  • Unit Price: 0,15224 €
  • Digi-Reel®  : SI2307BDS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 20 850 - Immediate
  • Unit Price: Digi-Reel®

SI2307BDS-T1-E3

Datasheet
Digi-Key Part Number SI2307BDS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2307BDS-T1-E3
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Description MOSFET P-CH 30V 2.5A SOT23-3
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Detailed Description

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2307BDS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2307BDS-T1-E3CT