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SI1050X-T1-GE3 N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6
Price & Procurement
24 387 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,44000 0,44 €
10 0,38100 3,81 €
25 0,35520 8,88 €
100 0,26360 26,36 €
250 0,25040 62,60 €
500 0,20580 102,90 €
1 000 0,16727 167,27 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI1050X-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 24 000 - Immediate
  • Unit Price: 0,15713 €
  • Digi-Reel®  : SI1050X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 24 387 - Immediate
  • Unit Price: Digi-Reel®

SI1050X-T1-GE3

Datasheet
Digi-Key Part Number SI1050X-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1050X-T1-GE3
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Description MOSFET N-CH 8V 1.34A SC-89-6
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6

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Documents & Media
Datasheets SI1050X
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI1050X
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11,6nC @ 5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 4V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-6
Package / Case SOT-563, SOT-666
Base Part Number SI1050
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1050X-T1-GE3CT