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SI1022R-T1-GE3 N-Channel 60V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A
Price & Procurement
19 553 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,45000 0,45 €
10 0,38200 3,82 €
25 0,35680 8,92 €
100 0,26490 26,49 €
250 0,25168 62,92 €
500 0,20686 103,43 €
1 000 0,16814 168,14 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI1022R-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 18 000 - Immediate
  • Unit Price: 0,15795 €
  • Digi-Reel®  : SI1022R-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 19 553 - Immediate
  • Unit Price: Digi-Reel®

SI1022R-T1-GE3

Datasheet
Digi-Key Part Number SI1022R-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1022R-T1-GE3
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Description MOSFET N-CH 60V 330MA SC-75A
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 60V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A

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Documents & Media
Datasheets Si1022R
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si1022R
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0,6nC @ 4,5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
FET Feature -
Power Dissipation (Max) 250mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75A
Base Part Number SI1022
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1022R-T1-GE3CT