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IDH04G65C5XKSA2 Diode Silicon Carbide Schottky 650V 4A (DC) Through Hole PG-TO220-2-1
Price & Procurement
2 998 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,69000 1,69 €
10 1,42800 14,28 €
100 1,08530 108,53 €
500 0,94244 471,22 €
1 000 0,75965 759,65 €
5 000 0,74252 3.712,58 €
10 000 0,71396 7.139,57 €
50 000 0,68540 34.269,94 €

Submit a request for quotation on quantities greater than those displayed.

IDH04G65C5XKSA2

Datasheet
Digi-Key Part Number IDH04G65C5XKSA2-ND
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Manufacturer

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Manufacturer Part Number IDH04G65C5XKSA2
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Description DIODE SCHOTTKY 650V 4A TO220-2-1
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

Diode Silicon Carbide Schottky 650V 4A (DC) Through Hole PG-TO220-2-1

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Customer Reference
Documents & Media
Datasheets IDH04G65C5
Other Related Documents Part Number Guide
HTML Datasheet IDH04G65C5
Simulation Models SiC Diodes CoolSiC™ PSpice Generation 5 650V IDHxxG65C5 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolSiC™+
Packaging Tube 
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1,7V @ 4A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 70µA @ 650V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package 50
Other Names SP001632402